The Electrical Properties of N Type Germanium Semiconductor After Implanted by Boron Ion

Boron ion implantation into N type germanium semiconductor at ion dose from 0.149 x 1016 ion/cm2 up to 2.236 x 1016 ion/cm2 at ion energy from 60 keV up to 90 keV have been carried out. The breakdown voltage of P-N junction as a result of implantation process was determined. The measurement of the resistivity of the materials before and after implantation and annealing process have been done using four point probe method. From the measurement result, it has been found that there was a tendency that at the higher dose and ion energy, the sheet resistivity was decreasing. The best resistivity was 50.82 %, this was achieved at ion dose of 1.342 x 1016 ion/cm2 and energy of 90 keV. At this condition the best breakdown voltage was -8 volt. (author)