Published September 1972
| Version v1
Journal article
Random stopping power for protons in silicon
- 1. Stichting voor Fundamenteel Onderzoek der Materie, Amsterdam (Netherlands). Instituut voor Atoom en Molecuulfysica
Description
Abstract Information about the random stopping power (- dE/dx) for 120 keV protons in silicon has been obtained from the analysis of the energy of back-scattered protons. The apparatus used will be described in detail elsewhere.(1) A 120 keV proton beam was incident in a random direction on an etched silicon sample mounted in a goniometer.
Additional details
Identifiers
Publishing Information
- Journal Title
- Radiation Effects
- Journal Volume
- 16
- Journal Issue
- 1-2
- Series
- Radiat. Eff.
- Journal Page Range
- 139-140
- ISSN
- 0033-7579
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- United Kingdom
- INIS RN
- 4046745
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- No Abstract
- Descriptors DEI
- ANGULAR DISTRIBUTION; BACKSCATTERING; ENERGY SPECTRA; GONIOMETERS; KEV RANGE 10-100; KEV RANGE 100-1000; MULTI-CHANNEL ANALYZERS; PROTON BEAMS; PROTONS; SILICON; STOPPING POWER; SURFACE BARRIER DETECTORS
- Descriptors DEC
- BARYONS; BEAMS; DISTRIBUTION; ELECTRONIC EQUIPMENT; ELEMENTARY PARTICLES; ELEMENTS; ENERGY RANGE; FERMIONS; HADRONS; KEV RANGE; MEASURING INSTRUMENTS; NUCLEON BEAMS; NUCLEONS; PARTICLE BEAMS; PULSE ANALYZERS; RADIATION DETECTORS; SCATTERING; SEMICONDUCTOR DETECTORS; SEMIMETALS; SPECTRA
Optional Information
- Notes
- Brief communication.; Updated automatically by Metadata and Full-Text Enrichment Agent