Effect of HgI2 crystal nonuniformities on gamma-ray response
- 1. EG and G/EM, Goleta, CA (United States)
- 2. California Univ., Santa Barbara, CA (United States). Depts. of Mechanical Engineering and Materials
Description
As-grown HgI2 crystals exhibit regions of varying optical clarity indicative of varying defect density within the crystal bulk. It has been reported in the past that the energy resolution available from HgI2 gamma ray detectors is affected by these variations in crystal quality. The present work is a study correlating the crystal quality, mechanical response, and impurity variations of large-area detector slices with gamma response variations. It was found that regions of higher optical clarity exhibit a 'dead layer' at their suface that reduces the amplitude of their low energy gamma response peak. The hole lifetime is longer and the high energy gamma resolution better, however, in the regions that contain fewer optically visible defects. Chemical and structural analysis of the different crystal regions was done. Impurity content was not found to correlate directly with optical clarity nor were major variations in stoichiometry apparent between regions of different optical density. Microhardness measurements demonstrate that the clear regions exhibit a significantly higher Knoop microhardness than optically hazy regions. (orig.)
Additional details
Publishing Information
- Journal Title
- Nuclear Instruments and Methods in Physics Research. Section A
- Journal Volume
- 322
- Journal Issue
- 3
- Journal Page Range
- p. 390-401.
- ISSN
- 0168-9002
- CODEN
- NIMAER
Conference
- Title
- 7. international workshop on room temperature semiconductor X- and gamma-ray detectors and associated electronics.
- Dates
- 23-28 Sep 1991.
- Place
- Ravello (Italy).
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- Netherlands
- INIS RN
- 24036140
- Subject category
- S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- BETA-MINUS DECAY; CADMIUM 109; CARRIER LIFETIME; CESIUM 137; CRYSTAL DEFECTS; ELECTRON CAPTURE DECAY; ENERGY RESOLUTION; ENERGY SPECTRA; GAMMA DETECTION; GAMMA SPECTRA; HGI2 SEMICONDUCTOR DETECTORS; IMPURITIES; MERCURY IODIDES; MICROHARDNESS; RESPONSE FUNCTIONS
- Descriptors DEC
- BETA DECAY; BETA DECAY RADIOISOTOPES; BETA-MINUS DECAY RADIOISOTOPES; CADMIUM ISOTOPES; CESIUM ISOTOPES; CRYSTAL STRUCTURE; DECAY; DETECTION; ELECTRON CAPTURE RADIOISOTOPES; EVEN-ODD NUCLEI; FUNCTIONS; HALIDES; HALOGEN COMPOUNDS; HARDNESS; INTERMEDIATE MASS NUCLEI; IODIDES; IODINE COMPOUNDS; ISOTOPES; LIFETIME; MEASURING INSTRUMENTS; MECHANICAL PROPERTIES; MERCURY COMPOUNDS; MERCURY HALIDES; NUCLEAR DECAY; NUCLEI; ODD-EVEN NUCLEI; RADIATION DETECTION; RADIATION DETECTORS; RADIOISOTOPES; RESOLUTION; SEMICONDUCTOR DETECTORS; SPECTRA; YEARS LIVING RADIOISOTOPES
Optional Information
- Contract/Grant/Project number
- Contract DE-AC08-88-NV10617