Published October 1995
| Version v1
Journal article
Deposition and characterization of crystalline conductive RuO2 thin films
Creators
- 1. Materials Science and Technology Division, Superconductivity Technology Center, Los Alamos National Laboratory, Los Alamos, New Mexico 87545 (United States)
Description
Highly conductive metal-oxide RuO2 thin films have been successfully grown on yttria-stabilized zirconia (YSZ) substrates by pulsed laser deposition. Epitaxial growth of RuO2 thin films on YSZ and the atomically sharp interface between the RuO2 and the YSZ substrate are clearly evident from cross-sectional transmission electron microscopy. A diagonal-type epitaxy of RuO2 on YSZ is confirmed from x-ray diffraction measurements. The crystalline RuO2 thin films, deposited at temperatures in the range of 500 degree C to 700 degree C, have a room-temperature resistivity of 35±2 μΩ-cm, and the residual resistance ratio (R300K/R4.2K) is around 5 for the crystalline RuO2 thin films. copyright 1995 Materials Research Society
Additional details
Publishing Information
- Journal Title
- Journal of Materials Research
- Journal Volume
- 10
- Journal Issue
- 10
- Journal Page Range
- p. 2401-2403.
- ISSN
- 0884-2914
- CODEN
- JMREEE
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 27055638
- Subject category
- S36: MATERIALS SCIENCE; S36: MATERIALS SCIENCE;
- Descriptors DEI
- ELECTRIC CONDUCTIVITY; EPITAXY; LASERS; PHYSICAL VAPOR DEPOSITION; RUTHENIUM OXIDES; TEMPERATURE RANGE 0400-1000 K; THIN FILMS
- Descriptors DEC
- AMPLIFIERS; CHALCOGENIDES; CRYSTAL GROWTH METHODS; DEPOSITION; ELECTRICAL PROPERTIES; EQUIPMENT; FILMS; OXIDES; OXYGEN COMPOUNDS; PHYSICAL PROPERTIES; RUTHENIUM COMPOUNDS; SURFACE COATING; TEMPERATURE RANGE; TRANSITION ELEMENT COMPOUNDS