Published February 1, 2017 | Version v1
Journal article Metadata-only

Large area growth of monolayer MoS2 film on quartz and its use as a saturable absorber in laser mode-locking

Creators

  • 1. Laboratory of All-solid-state Light Sources, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083 (China)
  • 2. Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190 (China)
  • 3. Department of Physics, Georgia Southern University, GA 30460 (United States)

Description

Monolayer MoS2 film on quartz was fabricated by a home-made three-temperature zone chemical vapor deposition method. The photo, AFM image, Raman spectroscopy and HRTEM image showed that high quality as-grown MoS2 film completely covered the whole quartz substrate of a few cm2. A Nd:YVO4 laser with mode-locking operation was obtained by using the monolayer MoS2 on quartz as the saturable absorber (SA). To the best of our knowledge, this is the first report on large-area growth of high quality monolayer MoS2 film on transparent quartz substrate, and the first time that the CVD MoS2 SA was used in mode-locked solid state lasers. Because of the large area, high transmission, low non-saturable loss and high optical damage threshold of this material, it is very suitable for application in mode-locked solid state lasers. (paper)

Availability note (English)

Available from http://dx.doi.org/10.1088/1361-6641/32/2/025013

Additional details

Identifiers

DOI
10.1088/1361-6641/32/2/025013;

Publishing Information

Journal Title
Semiconductor Science and Technology
Journal Volume
32
Journal Issue
2
Journal Page Range
[6 p.]
ISSN
0268-1242
CODEN
SSTEET

INIS

Country of Publication
United Kingdom
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
49082280
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
Descriptors DEI
ATOMIC FORCE MICROSCOPY; CHEMICAL VAPOR DEPOSITION; FILMS; IMAGES; LAYERS; MODE LOCKING; MOLYBDENUM SULFIDES; QUARTZ; RAMAN SPECTROSCOPY; SOLID STATE LASERS; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY; VANADATES
Descriptors DEC
CHALCOGENIDES; CHEMICAL COATING; DEPOSITION; ELECTRON MICROSCOPY; LASER SPECTROSCOPY; LASERS; MICROSCOPY; MINERALS; MOLYBDENUM COMPOUNDS; OXIDE MINERALS; OXYGEN COMPOUNDS; REFRACTORY METAL COMPOUNDS; SPECTROSCOPY; SULFIDES; SULFUR COMPOUNDS; SURFACE COATING; TRANSITION ELEMENT COMPOUNDS; VANADIUM COMPOUNDS