Geometrical and electronic structures of graphene under different vacancy density and configuration
Creators
- 1. School of Electrical Engineering, Korea University, 5-Ga, Anam-dong, Seongbuk-Gu, Seoul 136-713 (Korea, Republic of)
- 2. Metallic Materials Division, Korea Institute of Materials Science, 797 Changwondaero, Changwon, Gyeongnam 642-831 (Korea, Republic of)
- 3. Green Technology Center, Korea Institute of Industrial Technology, 385-1 Dajeon, Jung-gu, Ulsan 681-310 (Korea, Republic of)
Description
Highlights: • We study geometrical and electronic structures of graphene with different vacancy densities. • Band structure of graphene is influenced by the density and configuration of vacancy. • Formation energy is varied by vacancy configuration under the same vacancy density. - Abstract: We calculated the geometrical and electronic structures of graphene with different vacancy densities and configurations. Vacancy was varied in graphene from mono- to tri-vacancy and configured to zigzag and armchair lattice directions. While di-vacancy in graphene led to a gap in the electronic structure, mono- and tri-vacancies shifted the Fermi level below the valence band maximum irrespective of vacancy configurations. Under the same density of vacancies, di-vacancy to zigzag direction had lower formation energy than defects along armchair direction. Meanwhile, tri-vacancy to zigzag lattice direction led to higher formation energy than defects to armchair direction.
Availability note (English)
Available from http://dx.doi.org/10.1016/j.apsusc.2015.10.055Additional details
Identifiers
- DOI
- 10.1016/j.apsusc.2015.10.055;
- PII
- S0169-4332(15)02471-X;
Publishing Information
- Journal Title
- Applied Surface Science
- Journal Volume
- 359
- Journal Page Range
- p. 55-60
- ISSN
- 0169-4332
- CODEN
- ASUSEE
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 48032787
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- CONFIGURATION; DEFECTS; DENSITY; ELECTRONIC STRUCTURE; FERMI LEVEL; FORMATION HEAT; GEOMETRY; GRAPHENE; VACANCIES; VALENCE
- Descriptors DEC
- CARBON; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; ELEMENTS; ENERGY LEVELS; ENTHALPY; MATHEMATICS; NONMETALS; PHYSICAL PROPERTIES; POINT DEFECTS; REACTION HEAT; THERMODYNAMIC PROPERTIES
Optional Information
- Copyright
- Copyright (c) 2015 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.