Published December 8, 2008 | Version v1
Journal article

The chemical and electronic surface and interface structure of CuGaSe2 thin-film solar cell absorbers

  • 1. Solarenergieforschung (SE2), Helmholtz-Zentrum Berlin fuer Materialien und Energie, Lise-Meitner Campus, Glienicker Str. 100, D-14109 Berlin (Germany)
  • 2. Department of Chemistry, University of Nevada, Las Vegas, 4505 Maryland Parkway, Box 454003, Las Vegas, Nevada 89154-4003 (United States)

Description

The chemical and electronic surface and interface structure of CuGaSe2 thin films was investigated by photoelectron spectroscopy. With bulk [Ga]/[Cu] ratios increasing from 0.94 to 1.39 a transition of the Cu:Ga:Se surface composition from 1:1:2 to 1:3:5 and a downward shift of the valence band maximum with respect to the Fermi energy were observed. The comparison with the conduction band minimum (CBM) of CdS reveals that at the CdS/CuGaSe2 interface the recombination barrier height simultaneously increases and a 'clifflike' offset is formed to the CBM of CuGaSe2

Additional details

Identifiers

Publishing Information

Journal Title
Applied Physics Letters
Journal Volume
93
Journal Issue
23
Journal Page Range
p. 232104-232104.3
ISSN
0003-6951
CODEN
APPLAB

Optional Information

Notes
(c) 2008 American Institute of Physics