Published 2001
| Version v1
Miscellaneous
Rashba field in modulation doped Si/SiGe quantum wells
Creators
- 1. Institute of Physics, Polish Academy of Sciences, Warsaw (Poland)
- 2. Institut fuer Halbleiter- und Festkoerperphysik, Johannes Kepler Universitaet, Linz (Austria)
Description
no abstract available
Additional details
Publishing Information
- Imprint Title
- Abstracts of 30. International School on Physics of Semiconducting Compounds Jaszowiec 2001
- Imprint Pagination
- 146 p.
- Journal Page Range
- p. 84
Conference
- Title
- 30. International School on Physics of Semiconducting Compounds Jaszowiec 2001
- Dates
- 1-8 Jun 2001
- Place
- Ustron-Jaszowiec (Poland)
INIS
- Country of Publication
- Poland
- Country of Input or Organization
- Poland
- INIS RN
- 33060151
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- No Abstract, Conference, Non-conventional Literature
- Descriptors DEI
- ANISOTROPY; CYCLOTRON RESONANCE; DOPED MATERIALS; ELECTRIC FIELDS; ELECTRON GAS; ELECTRON SPIN RESONANCE; GERMANIUM COMPOUNDS; HAMILTONIANS; INTERMETALLIC COMPOUNDS; LINE BROADENING; LINE WIDTHS; QUANTUM MECHANICS; SILICON ADDITIONS; SILICON COMPOUNDS; SPIN-SPIN RELAXATION
- Descriptors DEC
- ALLOYS; MAGNETIC RESONANCE; MATERIALS; MATHEMATICAL OPERATORS; MECHANICS; QUANTUM OPERATORS; RELAXATION; RESONANCE; SILICON ALLOYS