Published November 2019 | Version v1
Journal article

Synthesis and performance optimisation of spray coated Cu2ZnSnS4 absorbing layers from single-source xanthate precursors

  • 1. Department of Chemical and Environmental Engineering, Faculty of Science and Engineering, University of Nottingham Ningbo China, 315100, PR (China)
  • 2. International Doctoral Innovation Centre, University of Nottingham Ningbo China, Ningbo 315100, PR (China)
  • 3. Department of Chemical and Environmental Engineering, Advanced Materials Research Group, Faculty of Engineering, University of Nottingham, Nottingham NG7 2RD (United Kingdom)
  • 4. Wuhan University, School of Resource and Environmental Science, Wuhan 30079, Hubei, PR (China)
  • 5. Advanced Energy and Environmental Materials & Technologies Research Group, The University of Nottingham Ningbo China, Ningbo 315100, PR (China)

Description

Highlights: • Facile single-source precursor for the single-step deposition of CZTS thin films. • Kinetic analysis displayed need for a non-stoichiometric precursor mixture. • Detrimental phases formed from uneven decomposition kinetics have been mitigated. • Improved efficiency of xanthate deposited CZTS photovoltaic devices. -- Abstract: Cu2ZnSnS4 (CZTS) is a promising non-toxic and cheap absorber layer for the use in photovoltaic cells. In this work copper, zinc and tin xanthates were synthesised and deposited using a single-source spray coating technique to produce CZTS thin films, to investigate how the ratio of these precursors can alter the performance of the device. It was determined that using a tin rich xanthate precursor mix resulted in the thin film with the chemical composition closest to CZTS, with few contaminating phases (i.e. Cu2-xS, Cu2SnS3 and ZnS). To explain this observation, isothermal thermal gravimetric analysis was used to determine rate constants for the decomposition of these xanthate precursors. The rate constants of copper xanthate and zinc xanthate align very well (1.26 and 1.24 s−1 respectively). However, the rate constant for tin xanthate differs significantly (1.09 s−1). Therefore, to form the appropriate ratio in the final product, a tin rich precursor mixture is required. This tin rich xanthate sample was shown to have a band gap of 1.73 eV and a power conversion efficiency of 0.15%.

Additional details

Identifiers

DOI
10.1016/j.tsf.2019.137530;
PII
S0040609019305589;

Publishing Information

Journal Title
Thin Solid Films (Print)
Journal Volume
690
Journal Page Range
vp.
ISSN
0040-6090
CODEN
THSFAP

Optional Information

Copyright
Copyright (c) 2019 Elsevier B.V. All rights reserved.