Published 1989
| Version v1
Book
Itinerant vs. localized antiferromagnetism of CuO2 layers
Creators
- 1. Scuola Normale Superiore, I-56100 Pisa (Italy)
- 2. Dipartimento di Fisica, Univ. di Roma La Sapienza, I-00185 Roma (Italy)
Description
The authors study the antiferromagnetic (AF) ground state of CuO2 layers within a slave-boson approach to a multiband Hubbard model, whereby slave bosons are assigned to Cu sites to deal with the Hubbard repulsion Ud in the limit Ud = ∞. The stability of the antiferromagnetism is tested by varying the separation Δ between p and d hole energy levels and by allowing direct O-O hopping
Additional details
Publishing Information
- Publisher
- Elsevier Science Pub. Co., Inc.
- Imprint Place
- New York, NY (USA)
- Imprint Title
- Proceedings of the international conference on materials and mechanisms of superconductivity. High temperature superconductors II. Part 1-2
- Imprint Pagination
- 1744 p.
- Journal Page Range
- p. 785-786.
Conference
- Title
- International conference on materials and mechanisms of superconductivity - high-temperature superconductors II.
- Dates
- 23-28 Jul 1989.
- Place
- Stanford, CA (USA).
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 21055224
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- ANTIFERROMAGNETISM; BOSONS; COPPER OXIDES; HOLES; MATHEMATICAL MODELS; SUPERCONDUCTORS
- Descriptors DEC
- CHALCOGENIDES; COPPER COMPOUNDS; MAGNETISM; OXIDES; OXYGEN COMPOUNDS; TRANSITION ELEMENT COMPOUNDS
Optional Information
- Secondary number(s)
- CONF-890718--.