Spectral method for determining quantum wells thickness and the composition in strained heterostructures GaAs/InGaAs

A spectral method for determining the composition and width of quantum wells in strained GaAs/InGaAs heterostructures, based on the effect of separating of radiation absorption peaks of light and heavy holes, is proposed. Within the framework of the Van de Walle and Krijn model-solid theory for the band edges calculating based on the Bir and Pikus theory of deformation potentials, graphical and numerical methods were developed for determining the composition and width of the GaAs/InGaAs quantum wells with an indium content of around 0.4. (paper)