Simulation of MOS devices on time-dependent response of pulse total dose effects

The computational model of MOS Devices on time-dependent response of pulse total dose effects on MOS Devices is set up in the paper, including short-term recovery due to hole transport, the long-term recovery due to trapped hole anneal and the long-term buildup of interface traps. It is discussed in detail how spatial distribution difference of trapped holes affect annealing response and varying temperature affect buildup of interface state. The simulation results are fitted with experimental data. It has been proven that the computational model which has been built is correct. (authors)