Published August 2010
| Version v1
Journal article
Effect of spacer layers on current-voltage characteristics of resonant-tunneling diode
Creators
- 1. MEPhI National Research Nuclear University (Russian Federation)
Description
Using the numerical solution to the Schroedinger equation, current-voltage characteristics of the resonant-tunneling diode with spacer layers were obtained. The dependences of the peak current of the resonant-tunneling diode on the emitter spacer width were plotted. It was shown that the peak current depends periodically on the emitter spacer width. The constructed electron density diagrams showed that the increase in the peak current is associated with the resonant level in the emitter spacer region.
Additional details
Identifiers
Publishing Information
- Journal Title
- Semiconductors
- Journal Volume
- 44
- Journal Issue
- 8
- Journal Page Range
- p. 1034-1039
- ISSN
- 1063-7826
- CODEN
- SMICES
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 43040057
- Subject category
- S71: CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; S36: MATERIALS SCIENCE;
- Descriptors DEI
- CURRENTS; ELECTRIC POTENTIAL; ELECTRON DENSITY; LAYERS; NUMERICAL SOLUTION; PEAKS; PERIODICITY; SCHROEDINGER EQUATION; SPACERS; TUNNEL DIODES
- Descriptors DEC
- DIFFERENTIAL EQUATIONS; EQUATIONS; MATHEMATICAL SOLUTIONS; PARTIAL DIFFERENTIAL EQUATIONS; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DIODES; VARIATIONS; WAVE EQUATIONS
Optional Information
- Copyright
- Copyright (c) 2010 Pleiades Publishing, Ltd.