Simultaneous growth of Ga₂S₃ and GaS thin films using physical vapor deposition with GaS powder as a single precursor

High quality gallium sulfide II (GaS) and gallium sulfide III (${Ga}_2{S}_3$) thin films on ${SiO}_2$/Si substrates were simultaneously grown by using physical vapor deposition with GaS powder as a single precursor. By controlling the substrate temperature, we can selectively grow either GaS or Ga₂S₃ thin films on SiO₂/Si substrates. Relatively high and low substrate temperature conditions resulted in Ga₂S₃ and GaS thin films, respectively. The synthesized thin films were characterized by x-ray diffraction, Raman spectroscopy, field emission scanning electron microscopy, atomic force microscopy, and x-ray photoelectron spectroscopy analyses. (paper)