Magnetoresistance of Rippled Graphene in a Parallel Magnetic Field

The magnetoresistance of a monolayer graphene in a random magnetic field(RMF) with zero mean has been investigated. The RMF was produced by applying a magnetic field parallel to the graphene plane utilizing ripples. The magnetoresistance has shown the same magnetic field dependence and, unexpectedly, the same carrier density dependence as the conventional two-dimensional electron systems in random magnetic fields. The relation between the characteristic length of ripples and the magnitude of the magnetoresistance is discussed.