Published November 1, 2015 | Version v1
Journal article

Arbitrary phase shift of a semiconductor quantum dot charge qubit on a short time scale

  • 1. Key Laboratory of Quantum Information, CAS, University of Science and Technology of China Hefei, Anhui 230026, China and Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China - Hefei, Anhui 230026 (China)

Description

We present an experimental technique to better control the phase of an electron charge qubit, formed by a GaAs double quantum dot. A standard non-adiabatic gate pulse is used to generate the qubit rotation around the x-axis of the Bloch sphere. To gain good control of the z-rotation (the phase) on a short time scale, a fast 130 ps tipping pulse is superimposed on the non-adiabatic pulse. The two-axis gate operation is exhibited in the composite pulse excited qubit evolution spectrum. We demonstrate that the dynamic phase can be varied continuously from 0 to 6 π by varying the amplitude of the tipping pulse. The understanding of the spectrum is validated through simulation of the von Neumann equation. (letter)

Availability note (English)

Available from http://dx.doi.org/10.1209/0295-5075/112/37005

Additional details

Identifiers

Publishing Information

Journal Title
Europhysics Letters
Journal Volume
112
Journal Issue
3
Journal Page Range
[5 p.]
ISSN
0295-5075
CODEN
EULEEJ

INIS

Country of Publication
France
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
51057217
Subject category
S71: CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS;
Descriptors DEI
ELECTRONS; EQUATIONS; GALLIUM ARSENIDES; PHASE SHIFT; PULSES; QUANTUM DOTS; QUBITS; SIMULATION; SPECTRA
Descriptors DEC
ARSENIC COMPOUNDS; ARSENIDES; ELEMENTARY PARTICLES; FERMIONS; GALLIUM COMPOUNDS; INFORMATION; LEPTONS; NANOSTRUCTURES; PNICTIDES; QUANTUM INFORMATION