Published April 2009
| Version v1
Journal article
Observation of 1.5 μm band entanglement using single photon detectors based on sinusoidally gated InGaAs/InP avalanche photodiodes
Creators
- 1. NTT Basic Research Laboratories, NTT Corporation, 3-1 Morinosato Wakamiya, Atsugi 243-0198 (Japan)
Description
We describe the application of single photon detectors based on InGaAs/InP avalanche photodiodes incorporating the sinusoidal gating technique into a 1.5 μm band entanglement measurement. We constructed two detectors based on this technique with a 500 MHz gate frequency. Using these detectors, we successfully demonstrated the high-speed and high signal-to-noise ratio observation of 1.5 μm-band time-bin entangled photon pairs.
Availability note (English)
Available from http://dx.doi.org/10.1088/1367-2630/11/4/045006Additional details
Identifiers
Publishing Information
- Journal Title
- New Journal of Physics
- Journal Volume
- 11
- Journal Issue
- 4
- Journal Page Range
- [15 p.]
- ISSN
- 1367-2630
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 41041613
- Subject category
- S71: CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS;
- Descriptors DEI
- GALLIUM ARSENIDES; INDIUM ARSENIDES; INDIUM PHOSPHIDES; MHZ RANGE 100-1000; PHOTODIODES; PHOTONS; QUANTUM ENTANGLEMENT; QUANTUM MECHANICS; SIGNAL-TO-NOISE RATIO
- Descriptors DEC
- ARSENIC COMPOUNDS; ARSENIDES; BOSONS; DIMENSIONLESS NUMBERS; ELEMENTARY PARTICLES; FREQUENCY RANGE; GALLIUM COMPOUNDS; INDIUM COMPOUNDS; MASSLESS PARTICLES; MECHANICS; MHZ RANGE; PHOSPHIDES; PHOSPHORUS COMPOUNDS; PNICTIDES; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DIODES