Published September 1, 2019 | Version v1
Journal article

Investigation of palladium current collectors for vertical graphene-based microsupercapacitors

  • 1. Department of Microtechnology and Nanoscience (MC2), Chalmers University of Technology, Kemivagen 9, 41296 Gothenburg (Sweden)

Description

As microsystems are reduced in size and become integrated in the Internet of Things (IoT), they require an adequate power supply which can be integrated at the same size scale. Microsupercapacitors (MSCs), if coupled with on-chip harvesters, can offer solutions for a self-sustaining, on-chip power supply. However, the implementation of reliable MSC wafer-scale production compatible with CMOS technology remains a challenge. Palladium (Pd) is known as a CMOS compatible metal and, in this paper, we investigate the use of Pd as a contact material for vertical graphene (VG) electrodes in wafer-scale MSC fabrication. We show that a Ti diffusion barrier is required to prevent short-circuiting for the successful employment of Pd contacts. The fabricated MSCs demonstrate a capacitance of 1.3 μF/cm2 with an energy density of 0.42 μJ/cm2. Thus, utilization of a Ti diffusion barrier with a CMOS compatible Pd metal electrode is a step towards integrating MSCs in semiconductor microsystems. (paper)

Availability note (English)

Available from http://dx.doi.org/10.1088/1742-6596/1319/1/012007

Additional details

Publishing Information

Journal Title
Journal of Physics. Conference Series (Online)
Journal Volume
1319
Journal Issue
1
Journal Page Range
[7 p.]
ISSN
1742-6596

Conference

Title
29. Micromechanics and Microsystem Europe Workshop
Acronym
MME 2018
Dates
26-29 Aug 2018
Place
Smolenice (Slovakia)

INIS

Country of Publication
United Kingdom
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
53047677
Subject category
S77: NANOSCIENCE AND NANOTECHNOLOGY; S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Resource subtype / Literary indicator
Conference
Descriptors DEI
CAPACITANCE; DIFFUSION BARRIERS; ELECTRICAL FAULTS; ELECTRODES; ENERGY DENSITY; FABRICATION; GRAPHENE; IMPLEMENTATION; PALLADIUM; SEMICONDUCTOR MATERIALS
Descriptors DEC
CARBON; ELECTRICAL PROPERTIES; ELEMENTS; MATERIALS; METALS; NONMETALS; PHYSICAL PROPERTIES; PLATINUM METALS; TRANSITION ELEMENTS