Investigation of palladium current collectors for vertical graphene-based microsupercapacitors
Creators
- 1. Department of Microtechnology and Nanoscience (MC2), Chalmers University of Technology, Kemivagen 9, 41296 Gothenburg (Sweden)
Description
As microsystems are reduced in size and become integrated in the Internet of Things (IoT), they require an adequate power supply which can be integrated at the same size scale. Microsupercapacitors (MSCs), if coupled with on-chip harvesters, can offer solutions for a self-sustaining, on-chip power supply. However, the implementation of reliable MSC wafer-scale production compatible with CMOS technology remains a challenge. Palladium (Pd) is known as a CMOS compatible metal and, in this paper, we investigate the use of Pd as a contact material for vertical graphene (VG) electrodes in wafer-scale MSC fabrication. We show that a Ti diffusion barrier is required to prevent short-circuiting for the successful employment of Pd contacts. The fabricated MSCs demonstrate a capacitance of 1.3 μF/cm2 with an energy density of 0.42 μJ/cm2. Thus, utilization of a Ti diffusion barrier with a CMOS compatible Pd metal electrode is a step towards integrating MSCs in semiconductor microsystems. (paper)
Availability note (English)
Available from http://dx.doi.org/10.1088/1742-6596/1319/1/012007Additional details
Identifiers
Publishing Information
- Journal Title
- Journal of Physics. Conference Series (Online)
- Journal Volume
- 1319
- Journal Issue
- 1
- Journal Page Range
- [7 p.]
- ISSN
- 1742-6596
Conference
- Title
- 29. Micromechanics and Microsystem Europe Workshop
- Acronym
- MME 2018
- Dates
- 26-29 Aug 2018
- Place
- Smolenice (Slovakia)
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 53047677
- Subject category
- S77: NANOSCIENCE AND NANOTECHNOLOGY; S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- CAPACITANCE; DIFFUSION BARRIERS; ELECTRICAL FAULTS; ELECTRODES; ENERGY DENSITY; FABRICATION; GRAPHENE; IMPLEMENTATION; PALLADIUM; SEMICONDUCTOR MATERIALS
- Descriptors DEC
- CARBON; ELECTRICAL PROPERTIES; ELEMENTS; MATERIALS; METALS; NONMETALS; PHYSICAL PROPERTIES; PLATINUM METALS; TRANSITION ELEMENTS