Published November 1988 | Version v1
Journal article Metadata-only

Electrophysical properties of sputtered A25B36 films

Creators

  • 1. AN SSSR, Leningrad (USSR). Fiziko-Tekhnicheskij Inst.

Description

Causes of increased donor center concentration in (Bi, Sb)2Te3 thin sputtered layers at increasing migration of deposited material atoms and molecules on the growing film surface are studied. Mechanisms responsible for charge carrier mobility variation in the formed layers with n- and p-type conductivity under their heat treatment are determined

Additional details

Additional titles

Original title (Russian)
Электрофизические свойства пленок А

Publishing Information

Journal Title
Fizika Tverdogo Tela
Journal Volume
30
Journal Issue
11
Series
Fiz. Tverd. Tela.
Journal Page Range
3413-3416
ISSN
0367-3294
CODEN
FTVTA

INIS

Country of Publication
Russian Federation
Country of Input or Organization
USSR
INIS RN
20051711
Subject category
S36: MATERIALS SCIENCE;
Descriptors DEI
ANTIMONY TELLURIDES; BISMUTH TELLURIDES; CARRIER MOBILITY; CATHODE SPUTTERING; CHARGE CARRIERS; FILMS; HALL EFFECT; HEAT TREATMENTS; MEDIUM TEMPERATURE; N-TYPE CONDUCTORS; P-TYPE CONDUCTORS; TEMPERATURE DEPENDENCE; THERMOELECTRIC PROPERTIES; VAPOR PLATING
Descriptors DEC
ANTIMONY COMPOUNDS; BISMUTH COMPOUNDS; CHALCOGENIDES; DEPOSITION; ELECTRICAL PROPERTIES; MATERIALS; MOBILITY; PHYSICAL PROPERTIES; PLATING; SEMICONDUCTOR MATERIALS; SPUTTERING; SURFACE COATING; TELLURIDES; TELLURIUM COMPOUNDS