Effects of biaxial strain and functional groups on SiC/ti3C2 heterostructure: a first principle calculation
- 1. College of Aerospace and Civil Engineering, Harbin Engineering University, Harbin, 150001 (China)
Description
MXene-bonded heterostructure has been demonstrated as an effective strategy to prevent the face-to-face stacking of MXene and improve the performance of MXene anode for metal-ion batteries. However, the understanding of the interfacial electronic properties of MXene-bonded heterostructure is still a little clear. In this paper, the effects of biaxial strain and functional groups on the structure and electronic properties of SiC/Ti3C2 heterostructure have been investigated using the first-principles method. We found that there exists a strong interfacial coupling between the SiC and Ti3C2 sheet because of the chemical activity of Ti surface, and the carrier mobility of heterostructure can be further tuned by biaxial strain, which decreases with tensile strain and increases with compressive strain. Furthermore, it has been demonstrated that the surface functionalization of F and OH could reconcile the strong interlayer interaction between the bilayer, and the type of Schottky barrier can be tuned by functional groups. More notably, there exists a transition from metal to semiconductor when SiC/Ti3C2O2 is under the tensile strain of 6%, and the band gap can be opened with a larger strain. Taken together, these results indicate intriguing electronic properties of the SiC/Ti3C2 heterostructure, which could pave the way for MXene-based nanodevice applications. (paper)
Availability note (English)
Available from http://dx.doi.org/10.1088/2053-1591/ab49c8Additional details
Identifiers
Publishing Information
- Journal Title
- Materials Research Express (Online)
- Journal Volume
- 6
- Journal Issue
- 12
- Journal Page Range
- [13 p.]
- ISSN
- 2053-1591
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 52014421
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- CARRIER MOBILITY; SEMICONDUCTOR MATERIALS; SILICON CARBIDES; STRAINS; STRONG INTERACTIONS; THERMODYNAMIC ACTIVITY
- Descriptors DEC
- CARBIDES; CARBON COMPOUNDS; FUNDAMENTAL INTERACTIONS; INTERACTIONS; MATERIALS; MOBILITY; SILICON COMPOUNDS