Published October 31, 2017 | Version v1
Journal article

Effect of H-vacancy defect on the adsorption of CO and NO on graphane: A DFT study

  • 1. College of Physical Science and Technology, Sichuan University, Chengdu 610065 (China)
  • 2. College of Physics and Engineering, Henan University of Science and Technology, Luoyang 471023 (China)
  • 3. Research Center of Laser Fusion, China Academy of Engineering Physics, Mianyang 621900 (China)

Description

Highlights: • The presence of H-vacancy improved the reactivity of hydrogenated graphene. • The adsorption of CO and NO molecules on VHG were chemisorption. • The adsorption induced obvious change into the band gaps. - Abstract: We investigated the adsorption of CO and NO molecules on hydrogenated graphene (graphane) monolayer using density functional theory (DFT) calculations. The geometry, adsorption stability, and electronic properties of CO and NO molecules absorbed on pure and H-vacancy defected graphane sheet were performed. The calculated results suggested that the small adsorption energy indicated the adsorption of CO and NO molecules on pure graphane were physisorption. However, the presence of H-vacancy improved the reactivity of graphane and the adsorption on H-vacnacy defected graphane changed to chemisorption. The adsorption also induced obvious change into the band gaps, which can be seen as signal to detect the CO and NO gas.

Availability note (English)

Available from http://dx.doi.org/10.1016/j.apsusc.2017.05.234

Additional details

Identifiers

DOI
10.1016/j.apsusc.2017.05.234;
PII
S0169-4332(17)31611-2;

Publishing Information

Journal Title
Applied Surface Science
Journal Volume
420
Journal Page Range
p. 720-725
ISSN
0169-4332
CODEN
ASUSEE

Optional Information

Copyright
Copyright (c) 2017 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.