Published 2008 | Version v1
Report

Spheromak formation by steady inductive helicity injection

Creators

  • 1. University of Washington, Seattle (United States)

Description

Since the last IAEA meeting, new understanding and parameters have been achieved on the Helicity Injected Torus with Steady Inductive helicity injection current drive (HIT-SI) experiment. The experiment has a bowtie shaped spheromak confinement region with two helicity injectors. The inductive injectors are 180 degree segments of a small, oval-cross-section RFP. The Taylor-state model is shown to agree with HIT-SI surface and internal magnetic profile measurements. Helicity balance predicts the peak magnitude of toroidal spheromak current and the threshold for spheromak formation. The model also accurately predicts the division of the applied loop voltage between the injector and spheromak regions. Spheromaks with currents up to 29 kA have been produced. (author)

Part of:
22. IAEA fusion energy conference: 'Celebrating fifty years of fusion... entering into the burning plasma era'. Book of abstracts

Additional details

Publishing Information

Imprint Title
22. IAEA fusion energy conference: 'Celebrating fifty years of fusion... entering into the burning plasma era'. Book of abstracts
Imprint Pagination
295 p.
Journal Page Range
p. 133
Report number
INIS-XA--08N0893

Conference

Title
22. IAEA fusion energy conference - 50th Anniversary Controlled Nuclear Fusion Research
Acronym
FEC 2008
Dates
13-18 Oct 2008
Place
Geneva (Switzerland)

INIS

Country of Publication
International Atomic Energy Agency (IAEA)
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
40010305
Subject category
S70: PLASMA PHYSICS AND FUSION TECHNOLOGY;
Resource subtype / Literary indicator
Conference
Descriptors DEI
CROSS SECTIONS; HELICITY; PLASMA CONFINEMENT; SPHEROMAK DEVICES; SURFACES
Descriptors DEC
CLOSED PLASMA DEVICES; CONFINEMENT; PARTICLE PROPERTIES; THERMONUCLEAR DEVICES; TOKAMAK DEVICES

Optional Information

Secondary number(s)
IC/P4--5