Investigation of the Role of Hole Doping in Different High Temperature Superconducting Systems Using XANES Technique

X-ray Absorption Near edge Structure (XANES) technique was used to study the role of hole doping in F-doped Hg-1223 and the Ce-doped Tl-1223. Oxygen k-edge and Cu L2,3-edge structures were thoroughly investigated. The pre-edge features of O k-edge spectra, as a function of doping, reveal important information about the projected local density of unoccupied states on the O sites in the region close to the absorption edge, which is a measure of O 2p hole concentration in the valance band. Furthermore, the Cu L2,3 absorption edge provides useful information about the valance state of Cu which is also related to the hole state in the CuO2 planes. In this work, we will discuss these XANES results in these systems and correlate the observed improvements in the superconducting properties to the electronic structure in the CuO2 planes