Published February 1997
| Version v1
Journal article
Mobility of defects in GaAs on saturation of NMR by alternating electric field
Creators
- 1. Syktyvkarskij Gosudarstvennyj Univ, Syktyvkar (Russian Federation)
Description
Experimental study of indium stimulated transition diffusion in high-ohmic GaAs was conducted by means of Mnr saturation by the alternating electrical field. Indium diffusion coefficient was measured by means of two independent techniques. Compression of the results of the given measurements ensures the best coincidence in the assumption of diffusion enter modal mechanism
Additional details
Additional titles
- Original title (Russian)
- Подвижност' дефектов в GaAS при насыщении YaMR переменным электрическим током
Publishing Information
- Journal Title
- Fizika Tverdogo Tela
- Journal Volume
- 39
- Journal Issue
- 2
- Journal Page Range
- p. 246-249
- ISSN
- 0367-3294
- CODEN
- FTVTAC
INIS
- Country of Publication
- Russian Federation
- Country of Input or Organization
- Russian Federation
- INIS RN
- 30015828
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- ALTERNATING CURRENT; CRYSTAL DEFECTS; CRYSTAL DOPING; DIFFUSION; GALLIUM ARSENIDES; INDIUM ADDITIONS; NUCLEAR MAGNETIC RESONANCE; PROBABILITY; QUADRUPOLE MOMENTS; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE 0065-0273 K; TIME DEPENDENCE
- Descriptors DEC
- ARSENIC COMPOUNDS; ARSENIDES; CRYSTAL STRUCTURE; CURRENTS; ELECTRIC CURRENTS; GALLIUM COMPOUNDS; MAGNETIC RESONANCE; PNICTIDES; RESONANCE; TEMPERATURE RANGE
Optional Information
- Notes
- 10 refs.