Published April 1994
| Version v1
Journal article
Slow positron annihilation in silicide films formed by solid state interaction of Co/Ti/Si and Co/Si
Creators
- 1. Academia Sinica, Shanghai (China). Shanghai Inst. of Metallurgy
Description
Slow positron beam was used to investigate the solid state reaction of Co/Si and Co/Ti/Si. Variable-energy (0-20 keV) positrons were implanted into samples at different depths. The Doppler broadening of the annihilation γ-ray energy spectra measured at a number of different incident positron energies is characterized by a line-shape parameter, S. It was found that the measured S parameters are sensitive to thin film reaction and crystalline characteristics. In particular, the S parameter of epitaxial CoSi2 formed by the ternary reaction is quite different from that of the polycrystalline CoSi2 formed by direct reaction of Co with Si
Additional details
Publishing Information
- Journal Title
- Chinese Physics Letters
- Journal Volume
- 11
- Journal Issue
- 4
- Journal Page Range
- p. 231-234.
- ISSN
- 0256-307X
- CODEN
- CPLEEU
INIS
- Country of Publication
- China
- Country of Input or Organization
- China
- INIS RN
- 26051771
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- ANNIHILATION; COBALT SILICIDES; CRYSTALLIZATION; DOPPLER BROADENING; EPITAXY; KEV RANGE 01-10; KEV RANGE 10-100; PARAMETRIC ANALYSIS; POSITRONS; THIN FILMS
- Descriptors DEC
- ANTILEPTONS; ANTIMATTER; ANTIPARTICLES; COBALT COMPOUNDS; CRYSTAL GROWTH METHODS; ELEMENTARY PARTICLES; ENERGY RANGE; FERMIONS; FILMS; INTERACTIONS; KEV RANGE; LEPTONS; LINE BROADENING; MATTER; PARTICLE INTERACTIONS; PHASE TRANSFORMATIONS; SILICIDES; SILICON COMPOUNDS; TRANSITION ELEMENT COMPOUNDS