Published September 27, 2010
| Version v1
Journal article
Straining of SiGe ultrathin films with mesoporous Si substrates
Creators
- 1. Institut des Nanotechnologies de Lyon INL-UMR5270, CNRS, INSA de Lyon, Universite de Lyon, Villeurbanne F-69621 (France)
- 2. Institut des Nanotechnologies de Lyon INL-UMR5270, CNRS, Ecole Centrale de Lyon, Universite de Lyon, Ecully F-69134 (France)
- 3. Institut des Nanotechnologies de Lyon INL-UMR5270, CNRS, Universite Lyon 1, Universite de Lyon, Villeurbanne F-69622 (France)
Description
We report on the fabrication and characterization of ultrathin (down to 50 nm) tensile strained SiGe films on mesoporous Si substrates. Low temperature oxidation of the porous substrate relaxes the compressive strain in the as grown monocrystalline (mc) SiGe. Applying this method to a 50 nm thick mc-Si0.72Ge0.28 film, a tensile strain >0.78% can be achieved without compromising crystalline quality and up to 1.45 % without the appearance of cracks.
Additional details
Identifiers
- DOI
- 10.1063/1.3494594;
Publishing Information
- Journal Title
- Applied Physics Letters
- Journal Volume
- 97
- Journal Issue
- 13
- Journal Page Range
- p. 131910-131910.3
- ISSN
- 0003-6951
- CODEN
- APPLAB
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 42060604
- Subject category
- S36: MATERIALS SCIENCE; S77: NANOSCIENCE AND NANOTECHNOLOGY;
- Descriptors DEI
- COMPRESSION STRENGTH; CRACKS; CRYSTAL GROWTH; CRYSTAL STRUCTURE; FABRICATION; GERMANIUM SILICIDES; MOLECULAR BEAM EPITAXY; NANOSTRUCTURES; OXIDATION; POROUS MATERIALS; SEMICONDUCTOR MATERIALS; STRAINS; STRESSES; SUBSTRATES; THIN FILMS
- Descriptors DEC
- CHEMICAL REACTIONS; CRYSTAL GROWTH METHODS; EPITAXY; FILMS; GERMANIUM COMPOUNDS; MATERIALS; MECHANICAL PROPERTIES; SILICIDES; SILICON COMPOUNDS
Optional Information
- Notes
- (c) 2010 American Institute of Physics