Published 1986 | Version v1
Report Restricted

Dose enhancement of low energy radiation

Creators

Description

MOS capacitors were irradiated with 10-keV X rays through a reversible gold/aluminum bilaminate. The observed relative dose enhancement depended on the oxide thickness in an unexpected way. Possible implications for VLSI device response are discussed

Availability note (English)

MF available from INIS under the Report Number; Available from NTIS, PC A02/MF A01 as DE86006463.

Files

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The record is publicly accessible, but files are restricted to users with access.

Additional details

Publishing Information

Imprint Pagination
5 p.
Report number
SAND--86-0309C

Conference

Title
23. annual conference on nuclear and space radiation effects.
Dates
20-23 Jul 1986.
Place
Providence, RI (USA).

INIS

Country of Publication
United States
Country of Input or Organization
United States
INIS RN
17089977
Subject category
S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
Resource subtype / Literary indicator
Conference
Descriptors DEI
CAPACITORS; MOS TRANSISTORS; PHYSICAL RADIATION EFFECTS; X RADIATION
Descriptors DEC
ELECTRICAL EQUIPMENT; ELECTROMAGNETIC RADIATION; ENERGY STORAGE SYSTEMS; EQUIPMENT; IONIZING RADIATIONS; RADIATION EFFECTS; RADIATIONS; SEMICONDUCTOR DEVICES; TRANSISTORS

Optional Information

Secondary number(s)
CONF-860706--6.