Published 2001
| Version v1
Miscellaneous
The study of thermal oxidation of SiC surface
Creators
- 1. Institute of Microelectronics and Optoelectronics, Warsaw University of Technology, Warsaw (Poland)
- 2. ACREO AB Kista (Sweden)
Description
no abstract available
Additional details
Publishing Information
- Publisher
- Oficyna Wydawnicza Politechniki Warszawskiej
- ISBN
- 0-7803-7136-4
- Imprint Title
- Abstracts of 3. International Conference Novel Applications of Wide Bandgap Layers
- Imprint Pagination
- 207 p.
- Journal Page Range
- p. 167-168
Conference
- Title
- Novel Applications of Wide Bandgap Layers
- Acronym
- 3. International Conference
- Dates
- 26-30 Jun 2001
- Place
- Zakopane (Poland)
INIS
- Country of Publication
- Poland
- Country of Input or Organization
- Poland
- INIS RN
- 33033807
- Subject category
- S36: MATERIALS SCIENCE; S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- No Abstract, Conference, Non-conventional Literature
- Descriptors DEI
- ANNEALING; CAPACITORS; ELECTRICAL PROPERTIES; ENERGY-LEVEL DENSITY; EPITAXY; INTERFACES; MICROELECTRONICS; OXIDATION; SEMICONDUCTOR MATERIALS; SILICON CARBIDES; SILICON OXIDES; SURFACE COATING; THIN FILMS
- Descriptors DEC
- CARBIDES; CARBON COMPOUNDS; CHALCOGENIDES; CHEMICAL REACTIONS; CRYSTAL GROWTH METHODS; DEPOSITION; ELECTRICAL EQUIPMENT; EQUIPMENT; FILMS; HEAT TREATMENTS; MATERIALS; OXIDES; OXYGEN COMPOUNDS; PHYSICAL PROPERTIES; SILICON COMPOUNDS
Optional Information
- Contract/Grant/Project number
- KBN grant no. 8 T11B 073 19
- Notes
- 2 refs, 2 figs, 1 tab