Published January 2008 | Version v1
Journal article

Temperature dependence of excitonic emission in cubic CdSe thin film

  • 1. Department of Electrophysics, National Chiao Tung University, Hsin-Chu 30010, Taiwan (China)
  • 2. Department of Physics, Chung Yuan Christian University, Chung-Li 32023, Taiwan (China)
  • 3. Department of Electronic Engineering, Chung Yuan Christian University, Chung-Li 32023, Taiwan (China)

Description

A detailed photoluminescence investigation of the thermal redshift and broadening of the excitonic line of cubic CdSe film grown by molecular beam epitaxy is presented. Free excitonic emission from the cubic CdSe film was observed at low temperature. Temperature-dependent measurement was performed to obtain material parameters related to exciton-phonon interaction by fitting the experimental data to the phenomenological model. The relative contribution of both acoustic and optical phonon to the band gap shrinkage and exciton linewidth broadening are discussed. Exciton binding energy of 16±1.5 meV was determined from the Arrhenius analysis

Availability note (English)

Available from http://dx.doi.org/10.1016/j.jlumin.2007.06.003

Additional details

Identifiers

DOI
10.1016/j.jlumin.2007.06.003;
PII
S0022-2313(07)00202-5;

Publishing Information

Journal Title
Journal of Luminescence
Journal Volume
128
Journal Issue
1
Journal Page Range
p. 123-128
ISSN
0022-2313
CODEN
JLUMA8

Optional Information

Copyright
Copyright (c) 2007 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.