Low energy ion implanter for negative and positive ions

A low energy ion implanter for the energy range 100 eV-60 keV has been designed, manufactured and tested in the ion beam laboratory of the Institute of Physics. The system consists of a 30 kV extraction system, an analyzing magnet, a deceleration or acceleration system of changeable voltage from 0 up to 30 kV, electrostatic scanning system and a UHV target chamber. Three different ion sources can be used at the ion implanter: A Penning ion source, a hollow cathode ion source and a negative sputtering ion source. The system has been designed for ion beam materials modification, surface analysis and atomic-molecular physics research. (orig.)