Photoluminescence, depth profile, and lattice instability of hexagonal InN films
Creators
- 1. Federal University Campina Grande (UFCG), Department of Electrical Engineering, 58207 Campina Grande (Brazil)
- 2. VIR A/S, Kuldyssen 10, DK-2630 Taastrup (Denmark)
- 3. Technical University St. Petersburg, Politeknichaskaya 29, St. Petersburg (Russian Federation)
- 4. Laboratorium fuer Informationstechnologie (Lfl), Universitaet Hannover, Schneiderberg 32, D-30167 Hannover (Germany)
Description
High quality InN films have been grown on (0001) sapphire substrates by metalorganic molecular beam epitaxy, characterized for crystal structure, chemical composition, and optical properties. Depth profiling indicated a high, increasing oxygen concentration profile towards the volume of the film. Photoluminescence revealed two different, coexisting features: a low energy transition around 0.8 eV, and a high energy feature, peaking near 2 eV. The former band originates from the direct transition in the near surface range. The latter, low intensity band results from the bulk region. Oxynitride formation has been accounted for a spatially varying optical band gap EG, determined to 0.61 eV for pure, defect free material. X-ray diffraction analysis supports defect mediated lattice instability, as proposed recently by a molecular dynamic lattice theory
Additional details
Identifiers
- DOI
- 10.1063/1.1634691;
Publishing Information
- Journal Title
- Applied Physics Letters
- Journal Volume
- 83
- Journal Issue
- 26
- Journal Page Range
- p. 5440-5442
- ISSN
- 0003-6951
- CODEN
- APPLAB
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 36025665
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- CHEMICAL COMPOSITION; CRYSTAL GROWTH; CRYSTAL STRUCTURE; EV RANGE 01-10; INDIUM NITRIDES; INSTABILITY; LATTICE FIELD THEORY; LAYERS; MOLECULAR BEAM EPITAXY; OPTICAL PROPERTIES; OXYGEN; PHOTOLUMINESCENCE; SAPPHIRE; SEMICONDUCTOR MATERIALS; SUBSTRATES; SURFACES; THIN FILMS; X-RAY DIFFRACTION
- Descriptors DEC
- COHERENT SCATTERING; CONSTRUCTIVE FIELD THEORY; CORUNDUM; CRYSTAL GROWTH METHODS; DIFFRACTION; ELEMENTS; EMISSION; ENERGY RANGE; EPITAXY; EV RANGE; FIELD THEORIES; FILMS; INDIUM COMPOUNDS; LUMINESCENCE; MATERIALS; MINERALS; NITRIDES; NITROGEN COMPOUNDS; NONMETALS; OXIDE MINERALS; PHOTON EMISSION; PHYSICAL PROPERTIES; PNICTIDES; QUANTUM FIELD THEORY; SCATTERING
Optional Information
- Notes
- (c) 2003 American Institute of Physics.