Grazing incident X-ray fluorescence combined with X-ray reflectometry metrology protocol of telluride-based films using in-lab and synchrotron instruments
- 1. Université Grenoble Alpes, F-38000, Grenoble (France)
- 2. CEA, LETI, MINATEC Campus, 17 rue des Martyrs, 38054 Grenoble Cedex 9 (France)
Description
Highlights: • GIXRF-XRR protocol was developed by in-lab and synchrotron measurements • Instrumental parameters and measurement conditions on GIXRF/XRR data were evaluated • GIXRF/XRR elementary depth-profile swere validated by TOFSIMS and PPTOFMS • Diffusion effects were observed on elementary depth-profiles, confirmed by XPS • Ø In-lab and Synchrotron analysis demonstrated GIXRF/XRR as promising in-fab tool Telluride films are widely applied in data storage devices (advanced resistive memories, DVDs and Blue-rays disks), photovoltaic cells and infrared detectors. The properties of thin telluride alloys are deeply influenced by their chemical composition and compositional depth profile, whereas surface/interface effects may become preponderant in ultrathin films. The combination of X-ray reflectometry (XRR) and grazing-incidence X-ray fluorescence (GIXRF) is particularly adequate to probe these complex thin layered materials. In this paper, we evaluate the performances of Lab-based and synchrotron-based XRR/GIXRF strategies to characterize ultrathin (<10 nm) amorphous titanium‑tellurium films elaborated by Physical Vapor Deposition (PVD), and capped in situ with 5 nm‑tantalum passivation layer. We highlighted the impact of the instrumental setup on the qualitative XRR and GIXRF data and on the quantitative information deduced from the combined analysis. Both synchrotron-based and Lab-based strategies were sensitive enough to track the impact of small PVD process changes on the chemical depth-profiles, and to unambiguously reveal undesired tantalum‑tellurium inter-diffusion that was confirmed by X-Ray Photoelectron Spectroscopy.
Availability note (English)
Available from http://dx.doi.org/10.1016/j.sab.2018.07.003Additional details
Identifiers
- DOI
- 10.1016/j.sab.2018.07.003;
- PII
- S0584854718300582;
Publishing Information
- Journal Title
- Spectrochimica Acta. Part B, Atomic Spectroscopy
- Journal Volume
- 149
- Journal Page Range
- p. 143-149
- ISSN
- 0584-8547
- CODEN
- SAASBH
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 53022779
- Subject category
- S74: ATOMIC AND MOLECULAR PHYSICS;
- Descriptors DEI
- ALLOYS; CHEMICAL COMPOSITION; DEPTH; FLUORESCENCE; LAYERS; MASS SPECTROSCOPY; MEMORY DEVICES; NANOFILMS; PHOTOVOLTAIC EFFECT; PHYSICAL VAPOR DEPOSITION; SOLAR CELLS; SYNCHROTRONS; TANTALUM; TELLURIDES; TELLURIUM; TITANIUM; X RADIATION; X-RAY PHOTOELECTRON SPECTROSCOPY
- Descriptors DEC
- ACCELERATORS; CHALCOGENIDES; CYCLIC ACCELERATORS; DEPOSITION; DIMENSIONS; DIRECT ENERGY CONVERTERS; ELECTROMAGNETIC RADIATION; ELECTRON SPECTROSCOPY; ELEMENTS; EMISSION; EQUIPMENT; FILMS; IONIZING RADIATIONS; LUMINESCENCE; MATERIALS; METALS; NANOMATERIALS; PHOTOELECTRIC CELLS; PHOTOELECTRIC EFFECT; PHOTOELECTRON SPECTROSCOPY; PHOTON EMISSION; PHOTOVOLTAIC CELLS; RADIATIONS; REFRACTORY METALS; SEMIMETALS; SOLAR EQUIPMENT; SPECTROSCOPY; SURFACE COATING; TELLURIUM COMPOUNDS; THIN FILMS; TRANSITION ELEMENTS
Optional Information
- Copyright
- Copyright (c) 2018 Elsevier B.V. All rights reserved.