Published December 2014 | Version v1
Journal article Metadata-only

A study of vacancy defects related to gray tracks in KTiOPO4 (KTP) using positron annihilation

Creators

  • 1. State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100 (China)
  • 2. Key Laboratory of Nuclear Analysis Techniques, Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100049 (China)

Description

For the first time to our knowledge, positron annihilation spectroscopy (PAS) was used to study vacancy defects in KTiOPO4 (KTP) single crystals. Positron annihilation lifetime spectroscopy combined with dielectric measurements identified the existence of oxygen vacancies and reflected the concentration of vacancy defects in three samples. The vacancy defects in KTP do not consist of monovacancies, but rather vacancy complexes. Doppler broadening indicates that the vacancy defects are distributed uniformly. A relationship is established where a crystal with a low oxygen vacancy concentration and a highly balanced stoichiometry has a higher resistance to gray track formation

Additional details

Identifiers

DOI
10.1063/1.4903305;

Publishing Information

Journal Title
AIP Advances
Journal Volume
4
Journal Issue
12
Journal Page Range
p. 127103-127103.7
ISSN
2158-3226
CODEN
AAIDBI

INIS

Country of Publication
United States
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
46126087
Subject category
S36: MATERIALS SCIENCE;
Descriptors DEI
ANNIHILATION; DEFECTS; DIELECTRIC MATERIALS; DOPPLER BROADENING; MONOCRYSTALS; OXYGEN; PARTICLE TRACKS; RADIATION DOSE UNITS; SPECTROSCOPY; VACANCIES
Descriptors DEC
CRYSTAL DEFECTS; CRYSTAL STRUCTURE; CRYSTALS; ELEMENTS; INTERACTIONS; LINE BROADENING; MATERIALS; NONMETALS; PARTICLE INTERACTIONS; POINT DEFECTS; UNITS

Optional Information

Notes
(c) 2014 Author(s)