Mutual influence of elements in x-ray fluorescence analysis of thin bilayer Ni/Ge-systems

A new approach to the determination of the layer thickness in x-ray fluorescence analysis of bilayer Ni/Ge-systems was proposed.The approach was based on accounting for the degree of attenuation in the upper layer of both the primary x-ray tube radiation and the analytical line of the lower-layer element and the fluorescence intensity amplification of the upper layer by radiation from lower-layer atoms. (author)