Published March 1999
| Version v1
Journal article
Fluorescence characteristics of Er-implanted arsenic-doped silica glass waveguides
Creators
Description
Fluorescence lifetimes up to 8.8 ms have been achieved in arsenic-doped silica glass waveguides implanted with 2.7 MeV Er2+ with a dose of 4.75x1015 ions/cm2 after annealing at 800 deg. C for 60 min. These waveguides have a propagation loss of <1 dB/cm at 1528 nm, which is similar to the as-grown structures
Additional details
Identifiers
- PII
- S0168583X9800980X;
Publishing Information
- Journal Title
- Nuclear Instruments and Methods in Physics Research. Section B, Beam Interactions with Materials and Atoms
- Journal Volume
- 149
- Journal Issue
- 4
- Journal Page Range
- p. 447-450
- ISSN
- 0168-583X
- CODEN
- NIMBEU
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- China
- INIS RN
- 33059536
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- ANNEALING; ARSENIC; CRYSTAL DOPING; ERBIUM IONS; FLUORESCENCE; ION IMPLANTATION; LIFETIME; SILICA; WAVE PROPAGATION; WAVEGUIDES
- Descriptors DEC
- CHALCOGENIDES; CHARGED PARTICLES; ELEMENTS; EMISSION; HEAT TREATMENTS; IONS; LUMINESCENCE; MINERALS; OXIDE MINERALS; OXIDES; OXYGEN COMPOUNDS; PHOTON EMISSION; SEMIMETALS; SILICON COMPOUNDS; SILICON OXIDES
Optional Information
- Copyright
- Copyright (c) 1999 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.