Published February 2011 | Version v1
Journal article Metadata-only

Investigations on the properties of intermittently Gd-doped InGaN structures grown by molecular-beam epitaxy

Creators

  • 1. Institute of Scientific and Industrial Research, Osaka University, 8-1 Mihogaoka, Ibaraki, Osaka 567-0047 (Japan)

Description

Intermittent Gd-doping into InGaN has been attempted to obtain improved crystalline quality of the InGaGdN samples for spintronic device applications. Intermittently Gd-doped InGaN samples with different layer thickness of the intercepting- undoped InGaN layers have been grown by the electron cyclotron resonance plasma-excited molecular-beam epitaxy (ECR-MBE) technique and their structural and magnetic properties were studied. The incorporation of Gd by this intermittent doping method was confirmed by the X-ray fine structure (XAFS) analysis. The rocking curves and the reciprocal space maps (RSM) of these samples revealed that under certain growth parameters, they exhibited formation of superlattice like structure. The superconducting quantum interference device magnetometer (SQUID) measurements revealed that they show room temperature ferromagnetism (copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Availability note (English)

Available from: http://dx.doi.org/10.1002/pssc.201000440

Additional details

Identifiers

DOI
10.1002/pssc.201000440;

Publishing Information

Journal Title
Physica Status Solidi. C, Current Topics in Solid State Physics (Online)
Journal Volume
8
Journal Issue
2
Journal Page Range
p. 497-499
ISSN
1610-1642

Conference

Title
37. international symposium on compound semiconductors (ISCS 2010)
Dates
31 May - 4 Jun 2010
Place
Kagawa (Japan)

INIS

Country of Publication
Germany
Country of Input or Organization
Germany
INIS RN
42032754
Subject category
S36: MATERIALS SCIENCE;
Resource subtype / Literary indicator
Conference
Descriptors DEI
ABSORPTION SPECTROSCOPY; DOPED MATERIALS; ECR ION SOURCES; FERROMAGNETISM; GADOLINIUM ADDITIONS; GALLIUM NITRIDES; GROWTH; HYPERFINE STRUCTURE; INDIUM NITRIDES; MAGNETIZATION; MEASURING INSTRUMENTS; MOLECULAR BEAM EPITAXY; SQUID DEVICES; SUPERLATTICES; THICKNESS; THIN FILMS; X-RAY DIFFRACTION; X-RAY SPECTROSCOPY
Descriptors DEC
ALLOYS; COHERENT SCATTERING; CRYSTAL GROWTH METHODS; DIFFRACTION; DIMENSIONS; ELECTRONIC EQUIPMENT; EPITAXY; EQUIPMENT; FILMS; FLUXMETERS; GADOLINIUM ALLOYS; GALLIUM COMPOUNDS; INDIUM COMPOUNDS; ION SOURCES; MAGNETISM; MATERIALS; MEASURING INSTRUMENTS; MICROWAVE EQUIPMENT; NITRIDES; NITROGEN COMPOUNDS; PNICTIDES; RARE EARTH ADDITIONS; RARE EARTH ALLOYS; SCATTERING; SPECTROSCOPY; SUPERCONDUCTING DEVICES

Optional Information

Notes
With 5 figs., 1 tab., 7 refs.