Published March 15, 2003
| Version v1
Journal article
A simple analytical method for the characterization of the melt region of a semiconductor under focused laser irradiation
Description
A simple analytical approach, based on an energy balance equation, is introduced to describe the melt region of a semiconductor under a focused pulsed laser irradiation. In this model, an approximate analytical solution of the time-dependent hemispherical melt radius is calculated, and satisfactorily compared with experiments on silicon irradiated with a focused, 1 μs beam diameter, visible laser of a few watts with pulse widths of 0.03-10 μs
Additional details
Identifiers
- DOI
- 10.1016/S0169-4332(02)01350-8;
- arXiv
- arXiv:gr-qc/0110095v1;
- PII
- S0169433202013508;
Publishing Information
- Journal Title
- Applied Surface Science
- Journal Volume
- 208-209
- Journal Issue
- 1
- Journal Page Range
- p. 267-271
- ISSN
- 0169-4332
- CODEN
- ASUSEE
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 38086401
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- ENERGY BALANCE; EQUATIONS; LASER RADIATION; MELTING; PULSED IRRADIATION; SEMICONDUCTOR MATERIALS; SILICON
- Descriptors DEC
- ELECTROMAGNETIC RADIATION; ELEMENTS; IRRADIATION; MATERIALS; PHASE TRANSFORMATIONS; RADIATIONS; SEMIMETALS
Optional Information
- Copyright
- Copyright (c) 2002 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.