Published May 15, 2008 | Version v1
Journal article

Effect of ultraviolet irradiation on electrical resistance and phase transition characteristics of thin film vanadium oxide

  • 1. Harvard School of Engineering and Applied Sciences, Harvard University, Cambridge, Massachusetts 02138 (United States)

Description

Metal-insulator transitions in strongly correlated oxides such as vanadium oxide (VO2) are of great scientific and technological interest. Due to the presence of multiple oxidation states, synthesis of high-quality VO2 films on substrates with the desired phase transition characteristics such as large jumps in phase transition resistance is a challenge. We show that the resistance ratio across the metal-insulator transition as well as the resistance of thin film VO2 can be modulated at relatively low temperatures by the use of ultraviolet irradiation. The enhanced oxygen incorporation due to creation of excited oxygen species enables controllably tunable stoichiometry

Additional details

Identifiers

Publishing Information

Journal Title
Journal of Applied Physics
Journal Volume
103
Journal Issue
10
Journal Page Range
p. 106104-106104.3
ISSN
0021-8979
CODEN
JAPIAU

INIS

Optional Information

Notes
(c) 2008 American Institute of Physics