Published May 15, 2008
| Version v1
Journal article
Effect of ultraviolet irradiation on electrical resistance and phase transition characteristics of thin film vanadium oxide
Creators
- 1. Harvard School of Engineering and Applied Sciences, Harvard University, Cambridge, Massachusetts 02138 (United States)
Description
Metal-insulator transitions in strongly correlated oxides such as vanadium oxide (VO2) are of great scientific and technological interest. Due to the presence of multiple oxidation states, synthesis of high-quality VO2 films on substrates with the desired phase transition characteristics such as large jumps in phase transition resistance is a challenge. We show that the resistance ratio across the metal-insulator transition as well as the resistance of thin film VO2 can be modulated at relatively low temperatures by the use of ultraviolet irradiation. The enhanced oxygen incorporation due to creation of excited oxygen species enables controllably tunable stoichiometry
Additional details
Identifiers
- DOI
- 10.1063/1.2931006;
Publishing Information
- Journal Title
- Journal of Applied Physics
- Journal Volume
- 103
- Journal Issue
- 10
- Journal Page Range
- p. 106104-106104.3
- ISSN
- 0021-8979
- CODEN
- JAPIAU
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 40017932
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- ELECTRIC CONDUCTIVITY; IRRADIATION; PHASE TRANSFORMATIONS; STOICHIOMETRY; SUBSTRATES; THIN FILMS; ULTRAVIOLET RADIATION; VANADIUM OXIDES
- Descriptors DEC
- CHALCOGENIDES; ELECTRICAL PROPERTIES; ELECTROMAGNETIC RADIATION; FILMS; OXIDES; OXYGEN COMPOUNDS; PHYSICAL PROPERTIES; RADIATIONS; TRANSITION ELEMENT COMPOUNDS; VANADIUM COMPOUNDS
Optional Information
- Notes
- (c) 2008 American Institute of Physics