Published 1900 | Version v1
Book

Quantitative analysis of boron and aluminium in silicon using the Castaing-Slodzian ion analyzer

  • 1. CEA Centre d'Etudes Nucleaires de Grenoble, 38 (France). Service de Chimie Analytique
  • 2. CEA Centre d'Etudes Nucleaires de Grenoble, 38 (France). Lab. d'Electronique et de Technologie de l'Informatique

Description

no abstract available

Additional details

Additional titles

Original title (French)
Analyses quantitatives de bore et d'aluminium dans le silicium au moyen de l'analyseur ionique Castaing-Slodzian

Publishing Information

Publisher
Centre d'Etudes Nucleaires. Laboratoire d'Electronique et de Technologie de l'Informatique.
Imprint Place
Grenoble, France
Imprint Title
Proceedings of the colloquium on the characterization of semiconductor materials and technologies
Imprint Pagination
p. 283-288.

Conference

Title
Colloquium on the physicochemical and electrical properties of semiconductor materials and the manufacturing processes for these materials.
Dates
27 Sep 1972.
Place
Grenoble, France.

INIS

Country of Publication
France
Country of Input or Organization
France
INIS RN
5116637
Subject category
S37: INORGANIC, ORGANIC, PHYSICAL AND ANALYTICAL CHEMISTRY;
Resource subtype / Literary indicator
Conference
Descriptors DEI
ALUMINIUM; BORON; DEPTH; DISTRIBUTION; ION PROBES; QUANTITATIVE CHEMICAL ANALYSIS; SEMICONDUCTOR MATERIALS; SILICON; SPUTTERING
Descriptors DEC
CHEMICAL ANALYSIS; DIMENSIONS; ELEMENTS; METALS; PROBES; SEMIMETALS

Optional Information

Notes
Imprint:Comptes rendus du colloque caracterisation des materiaux et technologies des semiconducteurs.