Auger interaction of electrons with complexes of point centers in some Asup(3)Bsup(5) semiconductors

Probability assessments of Auger process on complexes of connected charges in semiconductors with zone structure of GaAs, InP-type are presented. It is shown, that such processes may be characterized by large cross sections (up to 10-2 sm2) and influence not only the charge carrier lifetime value, but other material kinetic parameters as well. Analysis of results of experimental study of ionization processes in GaAs and InP is carried out. It is shown, that ionization of traps with 0.2-0.3 eV depth occurs according to Auger mechanism with the assistance of high s-zone valley electrons