Published June 1, 2014 | Version v1
Journal article Metadata-only

Ferroelectric switching in epitaxial GeTe films

Creators

  • 1. Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba Central 4, 1-1-1 Higashi, Tsukuba, Ibaraki 305-8562 Japan (Japan)
  • 2. Department of Physics and Astronomy, University of Nebraska, Lincoln, Nebraska 68588-0299 (United States)
  • 3. Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5-7, 10117 Berlin (Germany)

Description

In this paper, using a resonance-enhanced piezoresponse force microscopy approach supported by density functional theory computer simulations, we have demonstrated the ferroelectric switching in epitaxial GeTe films. It has been shown that in films with thickness on the order of several nanometers reversible reorientation of polarization occurs due to swapping of the shorter and longer Ge-Te bonds in the interior of the material. It is also hinted that for ultra thin films consisting of just several atomic layers weakly bonded to the substrate, ferroelectric switching may proceed through exchange of Ge and Te planes within individual GeTe layers

Additional details

Identifiers

DOI
10.1063/1.4881735;

Publishing Information

Journal Title
APL Materials
Journal Volume
2
Journal Issue
6
Journal Page Range
p. 066101-066101.7
ISSN
2166-532X
CODEN
AMPADS

INIS

Country of Publication
United States
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
46010371
Subject category
S36: MATERIALS SCIENCE;
Descriptors DEI
COMPUTERIZED SIMULATION; DENSITY FUNCTIONAL METHOD; EPITAXY; FERROELECTRIC MATERIALS; GERMANIUM TELLURIDES; MICROSCOPY; POLARIZATION; SUBSTRATES; THIN FILMS
Descriptors DEC
CALCULATION METHODS; CHALCOGENIDES; CRYSTAL GROWTH METHODS; DIELECTRIC MATERIALS; FILMS; GERMANIUM COMPOUNDS; MATERIALS; SIMULATION; TELLURIDES; TELLURIUM COMPOUNDS; VARIATIONAL METHODS

Optional Information

Notes
(c) 2014 Author(s)