Published March 1984 | Version v1
Journal article Metadata-only

New sputtering techniques for semiconductor metallization

Creators

  • 1. Materials Research Co. Ltd., Penn (UK)

Description

New sputtering techniques for semiconductor metallization are discussed, with particular reference to aluminium and refractory metal silicides. The effect of several process parameters on the nature of the films is emphasized and system requirements for large scale production of reproducible films are indicated. (author)

Additional details

Publishing Information

Journal Title
Vacuum
Journal Volume
34
Journal Issue
3-4
Series
Vacuum.
Journal Page Range
365-369
ISSN
0042-207X

Conference

Title
SIRA international seminar on film preparation and etching using vacuum or plasma technology.
Dates
22-24 Mar 1983.
Place
Brighton (UK).

INIS

Country of Publication
United Kingdom
Country of Input or Organization
United Kingdom
INIS RN
15045044
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Resource subtype / Literary indicator
Conference
Descriptors DEI
ALUMINIUM ALLOYS; ELECTRIC CONDUCTIVITY; FILMS; INTEGRATED CIRCUITS; REFRACTORIES; SEMICONDUCTOR MATERIALS; SPUTTERING; TANTALUM SILICIDES
Descriptors DEC
ALLOYS; ELECTRICAL PROPERTIES; ELECTRONIC CIRCUITS; MATERIALS; PHYSICAL PROPERTIES; SILICIDES; SILICON COMPOUNDS; TANTALUM COMPOUNDS; TRANSITION ELEMENT COMPOUNDS