Published 2018 | Version v1
Journal article

Thermal conductivity of InN with point defects from first principles

  • 1. Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States). Materials Science & Technology Division

Description

We present ab initio calculations of thermal conductivity of InN with vacancies and substitutional defects using a full solution of the Peierls-Boltzmann transport equation. Our parameter-free calculations are in good agreement with experimental measurements demonstrating the predictive power of this approach. Phonon-defect scattering rates are computed from a Green's function methodology that is nonperturbative and includes interatomic force constant variance induced near the defects. Restricting calculations to first-order perturbation approaches can overestimate optic phonon scattering rates by nearly three orders of magnitude. On the other hand, neglecting the force variance weakens the scattering rates by about an order of magnitude, mostly in the low-frequency region below 2 THz. Here, this work elucidates important properties of phonon-defect scattering in thermal transport and demonstrates the predictive power of the coupling of Peierls-Boltzmann transport, Green's function methods, and density functional theory.

Availability note (English)

Available from https://www.osti.gov/servlets/purl/1461938; https://www.osti.gov/biblio/1461938; DOE Accepted Manuscript full text, or the publishers Best Available Version will be available free of charge after the embargo period

Additional details

Publishing Information

Journal Title
Physical Review B
Journal Volume
98
Journal Issue
1
Journal Page Range
vp.
ISSN
2469-9950

Optional Information

Contract/Grant/Project number
AC05-00OR22725
Funding organization
USDOE Office of Science - SC, Basic Energy Sciences (BES) (SC-22) (United States)
Secondary number(s)
OSTIID--1461938