Formation of amorphous layers in Al2O3 by ion implantation

Previous work has established that it is difficult to turn the near-surface region of α-Al2O3 amorphous by ion implantation at room temperature. In this work the authors have established the conditions that are necessary to form an amorphous region in Al2O3 by ion implantation. In general, they find that high doses at room temperature or moderate doses at LN2 temperatures are required to turn the near surfaces amorphous. These studies have been carried out using Rutherford backscattering (RBS)-ion channeling measurements to characterize the structural property changes resulting from ion implantation. Selected crystals have also been examined by transmission electron microscopy