Structure analysis technique using synchrotron radiation under low temperature and high pressure

This study aims at trial production on a system to precisely measure crystal structure of pressed specimen through a diamond anvil cell continuously changeable temperature and pressure in range of about 10 K and 30 GPa by using synchrotron radiation for X-ray source and an imaging plate (IP) for two-dimensional detector, to examine change of behavior of various materials under low temperature by pressure. By conversion in 1998 fiscal year, a low temperature/high pressure experimental apparatus was finished for an exclusive system. By using this apparatus, a study on pressure induced non-crystallization of tetrahedron coordination semiconductor under low temperature and high pressure and a study on rare-each phosphoric compounds and others focused as rare-earth chalcogenides and heavy fermions have been progressed. (G.K.)