Low threshold and room-temperature lasing of electrically pumped red-emitting InP/(Al0.20Ga0.80)0.51In0.49P quantum dots

In this letter, we report on laser light emission in the red spectral range. Self-assembled InP quantum dots being electrically pumped were embedded in a microcavity mesa realized by monolithically grown high-reflectivity AlGaAs distributed Bragg reflectors. Common semiconductor laser processing steps were used to fabricate stand-alone index-guided vertical-cavity surface-emitting lasers with oxide apertures for optical transverse mode confinement and electrical current constriction. Ultra-low threshold current densities of around 10A/cm2 and room temperature lasing were achieved.