Influence of plastic deformation on superconducting properties of V3Si single crystals

Effects of the plastic deformation at elevated temperatures on the critical parameters Tsub(c) and jsub(c) of V3Si single crystals are reported. Plastic deformation can increase as well as decrease the critical temperature. The sign of the change in Tsub(c) can be attributed to different available point defect types on both sides from stoichiometry. In samples with excess V a decrease in Tsub(c) is observed combined with an increase of the electrical resistivity ratio r. The transition becomes broader and the critical current density increases with the deformation. In samples with excess Si the critical temperature is found to be increased as r decreases, at the same time the critical current density is lowered. (author)