Influence of temperature during 640-MeV proton irradiation of formation of radiation defects in n-type silicon

A study was made of the nature and efficiency of formation of radiation defects in n-type silicon (rhoapprox. =180 Ω.cm) subjected to ''hot'' irradiation (T/sub irr/=30--700 0C) with 640-MeV protons. The experimental results deduced from measurements of the Hall effect indicated that the following defects were formed at various stages of such irradiation: A centers, E centers, oxygen--divacancy complexes, oxygen--carbon--divacancy complexes, and intrinsic radiation defects (divacancies and various polyvacancy or interstitial complexes contributing the levels at E/sub c/ - 0.24, E/sub v/+0.29, and E/sub v/+0.32 eV to the band gap). These intrinsic radiation defects were found mainly in the central parts (cores) of defect clusters produced by irradiation, while impurity--primary defect complexes were usually found at the periphery of such clusters. An increse of the irradiation temperature reduced the size of the clusters. This was due to the fact that an increase in T/sub irr/ enhanced annihilation of the primary radiation defects and reduced the efficiency of introduction of these defects in the peripheral parts of the clusters