Published April 1996
| Version v1
Journal article
High tolerance to radiation effects and low noise performance of ACUTE -- A complementary bipolar SOI IC technology
Creators
- 1. United Technologies Microelectronics Center, Colorado Springs, CO (United States)
Description
The 1/f noise performance of advanced complementary bipolar process from united technologies (ACUTE) is presented as a function of total dose, device geometry, and polarity as well as bias condition during irradiation. ACUTE's noise performance is also compared to noise from devices built on a standard bipolar process. The measured noise spectrum is expressed in terms of Hooge's constant--αH which normalizes the ''noisiness'' of the device to its geometry and doping profiles and therefore allows one to compare different structures. The results indicate a significant radiation tolerance and superior low noise of ACUTE process as compared with standard bipolar technology
Additional details
Publishing Information
- Journal Title
- IEEE Transactions on Nuclear Science
- Journal Volume
- 43
- Journal Issue
- 2Pt2
- Journal Page Range
- p. 761-768.
- ISSN
- 0018-9499
- CODEN
- IETNAE
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 27060192
- Subject category
- S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
- Descriptors DEI
- COBALT 60; COMPARATIVE EVALUATIONS; DOPED MATERIALS; FABRICATION; INTEGRATED CIRCUITS; PERFORMANCE; PHYSICAL RADIATION EFFECTS
- Descriptors DEC
- BETA DECAY RADIOISOTOPES; BETA-MINUS DECAY RADIOISOTOPES; COBALT ISOTOPES; ELECTRONIC CIRCUITS; EVALUATION; INTERMEDIATE MASS NUCLEI; INTERNAL CONVERSION RADIOISOTOPES; ISOMERIC TRANSITION ISOTOPES; ISOTOPES; MATERIALS; MINUTES LIVING RADIOISOTOPES; NUCLEI; ODD-ODD NUCLEI; RADIATION EFFECTS; RADIOISOTOPES; YEARS LIVING RADIOISOTOPES