Published 1987
| Version v1
Book
Electronic transport properties of hot-pressed B/sub 6/Si
- 1. Jet Propulsion Lab., Pasadena, CA (USA)
Description
Measurements of the electrical conductivity, Seebeck coefficient and Hall mobility from --300 K to --1300 K have been carried out on multiphase hotpressed samples of the nominal composition B/sub 6/Si. In all samples the conductivity and the p-type Seebeck coefficient both increase smoothly with increasing temperature. By themselves, these facts suggest small-polaronic hopping between inequivalent sites. The measured Hall mobilities are always low, but vary in sign. A possible explanation is offered for this anomalous behavior
Additional details
Publishing Information
- Publisher
- Materials Research Society.
- Imprint Place
- Pittsburgh, PA (USA)
- ISBN
- 0-931837-64-2
- Imprint Title
- Novel refractory semiconductors
- Journal Page Range
- vp.
Conference
- Title
- Materials Research Society symposium on novel refractory semiconductors.
- Dates
- 21-23 Apr 1987.
- Place
- Anaheim, CA (USA).
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 20032971
- Subject category
- S36: MATERIALS SCIENCE; S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- BORON SILICIDES; ELECTRIC CONDUCTIVITY; ELECTRON MOBILITY; ELECTRONIC STRUCTURE; HALL EFFECT; HOT PRESSING; SEEBECK EFFECT; STRUCTURAL CHEMICAL ANALYSIS; TEMPERATURE DEPENDENCE
- Descriptors DEC
- BORON COMPOUNDS; ELECTRICAL PROPERTIES; FABRICATION; MATERIALS WORKING; MOBILITY; PARTICLE MOBILITY; PHYSICAL PROPERTIES; PRESSING; SILICIDES; SILICON COMPOUNDS